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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) *High Collector Power Dissipation *Complement to Type 2SA963 APPLICATIONS *Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 50 V 40 V 5 V 1.5 A 3 A 10 W 150 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC TJ Junction Temperature Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2209 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 IC= 2mA; IB= 0 B 50 V V(BR)CEO Collector-Emitter Breakdown Voltage 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA 1.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 2A; IB= 0.2mA B 1.5 V A A A Collector Cutoff Current VCB= 20V; IE= 0 VCE= 10V; IB= 0 B 1 ICEO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE Classifications Q 80-160 R 120-220 w ww scs .i VEB= 5V; IC= 0 IC= 1A; VCE= 5V IE= -0.5A; VCB= 5V .cn mi e 80 100 10 220 150 MHz IE= 0; VCB= 5V, ftest= 1MHz 50 pF isc Websitewww.iscsemi.cn 2 |
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